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MRF6P23190HR6中文资料

厂家型号

MRF6P23190HR6

文件大小

435.71Kbytes

页面数量

11

功能描述

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

射频MOSFET电源晶体管 HV6 2.3GHZ 40W

数据手册

原厂下载下载地址一下载地址二到原厂下载

简称

FREESCALE飞思卡尔

生产厂商

Freescale Semiconductor, Inc

中文名称

飞思卡尔半导体官网

MRF6P23190HR6数据手册规格书PDF详情

2300-2400 MHz, 40 W AVG., 28 V 2 x W-CDMA LATERAL N-CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.

• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01 Probability on CCDF.

Power Gain — 14 dB

Drain Efficiency — 23.5

IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

MRF6P23190HR6产品属性

  • 类型

    描述

  • 型号

    MRF6P23190HR6

  • 功能描述

    射频MOSFET电源晶体管 HV6 2.3GHZ 40W

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray