1805–2170 MHz, 6.3 W AVG., 28 V

This 6.3 watt RF power LDMOS transistor is designed for cellular base

station applications covering the frequency range of 1805 to 2170 MHz.

Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 6.3 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01 Probability on CCDF.

Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 6.3 Watts Avg., Input Signal PAR = 9.9 dB @ 0 Probability on CCDF.