N--Channel Enhancement--Mode Lateral MOSFET

This 50 watt RF power LDMOS transistor is designed for cellular base station

applications covering the frequency range of 1805 to 1880 MHz.

 Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,

IDQ = 1800 mA, Pout = 50 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01

Probability on CCDF.

Features

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

 Designed for Digital Predistortion Error Correction Systems

 Optimized for Doherty Applications

 In Tape and Reel. R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel.

For R5 Tape and Reel option, see p. 12.