DESCRIPTION AND APPLICATIONS

The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si3N4 passivation and is available in a variety of packages.

Typical applications include low noise receiver preamplifiers for commercial applications including wireless systems and radio link systems.

FEATURES

♦ 0.6 dB Noise Figure at 12 GHz

♦ 12 dB Associated Gain at 12 GHz

♦ Low DC Power Consumption

♦ Excellent Phase Noise