DESCRIPTION AND APPLICATIONS

The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 750 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP750 also features Si3N4 passivation and is available in die form or in other packages.

FEATURES

- 26 dBm Output Power at 1-dB Compression at 1.8 GHz

- 17 dB Power Gain at 1.8 GHz

- 0.7 dB Noise Figure

- 40 dBm Output IP3 at 1.8 GHz

- 55 Power-Added Efficiency