General Description

This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• 7.0 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 10 V

RDS(ON) = 0.050 Ω @ VGS = 4.5 V

• Low gate charge.

• Fast switching speed.

• High power and current handling capability.

Applications

• Battery switch

• Load switch

• Motor controls