General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 5.5 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V

RDS(ON) = 0.045 Ω @ VGS = 2.7 V.

■ High density cell design for extremely low RDS(ON).

■ High power and current handling capability in a widely used surface mount package.

■ Dual MOSFET in surface mount package.