General Description

SOP-8 P-Channel enhancement mode power field effect transistors

are produced using,high cell density, DMOS technology.This

very high density process is especially tailored to minimize

on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications

such as notebook computer power management

and other battery powered circuits where fast switching,low in-line

power loss,and resistance to transients are needed.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

Features

(VGS = 10V)

VDS (V) = -30V

ID = 7.9A

RDS(ON) ＜23mΩ(VGS=10V)

RDS(ON) ＜35 mΩ(VGS=-4.5V)