General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

​​​​​​​■ 52 A, 30 V. RDS(ON) = 0.0135 W @ VGS=10 V

RDS(ON) = 0.020 W @ VGS=4.5 V.

■ Critical DC electrical parameters specified at elevated

temperature.

■ Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor.

■ High density cell design for extremely low RDS(ON).

■ 175°C maximum junction temperature rating.