Description

The MOCD223-M consist of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor darlington detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications that require low input current and eliminates the need for through-the-board mounting.

Features

■ U.L. Recognized (File #E90700, Volume 2)

■ VDE Recognized (File #13616) (add option “V” for VDE approval, i.e, MOCD223V-M)

■ Convenient Plastic SOIC-8 Surface Mountable Package Style

■ High Current Transfer Ratio of 500 Minimum at IF = 1mA

■ Minimum BVCEO of 30 Volts Guaranteed

■ Standard SOIC-8 Footprint, with 0.050 Lead Spacing

■ Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

■ High Input-Output Isolation Voltage of 2500 VAC(rms) Guaranteed

Applications

■ Interfacing and coupling systems of different potentials and impedances

■ General purpose switching circuits

■ Monitor and detection circuits