DESCRIPTION

The MOCD217-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.

FEATURES

• U.L. Recognized (File #E90700, Volume 2)

• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD217V-M)

• Low Input Current (Specified @ 1 mA)

• Minimum BVCEO of 30 Volts Guaranteed

• Convenient Plastic SOIC-8 Surface Mountable Package Style

• Standard SOIC-8 Footprint, with 0.050 Lead Spacing

• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering

• High Input-Output Isolation of 2500 VAC(rms) Guaranteed

APPLICATIONS

• Interfacing and coupling systems of different potentials and impedances

• General purpose switching circuits

• Monitor and detection circuits