Description

The MOC119M device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor.

Features

■ High current transfer ratio of 300

■ No base connection for improved noise immunity

■ Underwriters Laboratory (UL) recognized File #E90700

■ IEC 60747-5-2 approval available as a test option

– add option ‘V’ (e.g., MOC119VM)

Applications

■ Appliances, measuring instruments

■ I/O interface for computers

■ Programmable controllers

■ Portable electronics

■ Interfacing and coupling systems of different potentials and impedance

■ Solid state relays