The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.

Features

• 60 A, 600 V @ TC = 110°C

• Low Saturation Voltage : VCE(sat) = 1.8 V @ IC = 30 A

• Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C

• Low Conduction Loss

Applications

• UPS, Welder