The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

Features

• 60A, 600V, TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss