General Description

These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features

• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V

• Low gate charge ( typical 15 nC)

• Low Crss ( typical 8.0 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability