General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.

Features

• 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V

• Low gate charge ( typical 4.0 nC)

• Low Crss ( typical 6.0 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• Low level gate drive requirement allowing direct operation from logic drivers