Description

These N-Channel enhancement mode power field effect transist-ors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc-e, and withstand high energy pulse in the avalanche and co-mmutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

• 43.5A, 100V, RDS(on) = 0.039Ω @VGS = 10 V

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 85 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating