General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize

on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge.

Features

• 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V

• Low gate charge ( typical 45 nC).

• Low Crss ( typical 25 pF).

• Fast switching.

• 100 avalanche tested.

• Improved dv/dt capability.