General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features

• 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V

• Low gate charge ( typical 12 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating