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FDZ294N中文资料
FDZ294N数据手册规格书PDF详情
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra low profile packaging, low gate charge, and low RDS(ON).
Features
• 6 A, 20 V RDS(ON) = 23 mΩ @ VGS = 4.5 V
RDS(ON) = 34 mΩ @ VGS = 2.5 V
• Occupies only 2.25 mm2 of PCB area.
Less than 50 of the area of a SSOT-6
• Ultra-thin package: less than 0.85mm height when mounted to PCB
• Outstanding thermal transfer characteristics: 4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability.
Applications
• Battery management
• Battery protection
FDZ294N产品属性
- 类型
描述
- 型号
FDZ294N
- 功能描述
MOSFET LOW_VOLTAGE
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
2520BGA |
32000 |
FAIRCHILD/仙童全新特价FDZ294N即刻询购立享优惠#长期有货 |
|||
FAIRCHILD/仙童 |
25+ |
BGA9 |
154544 |
明嘉莱只做原装正品现货 |
|||
Fairchild |
24+ |
9-BGA |
7500 |
||||
FAIRCHILD |
24+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
|||
FAIRCHILD |
19+ |
BGA |
20000 |
2770 |
|||
FAIRCHILD |
24+ |
BGA |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
FAIRCHILD |
17PB |
BGA9 |
200 |
普通 |
|||
FAIRCHILD |
08+ |
70 |
公司优势库存 热卖中! |
||||
FAIRCHILD |
24+ |
BGA |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
Fairchild |
07+ |
BGA9 |
450 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
FDZ294N 资料下载更多...
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FAIRCHILD相关芯片制造商
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