General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchilds Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V –12V).

Features

• –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ VGS = –4.5 V RDS(ON) = 0.057 Ω @ VGS = –2.5 V.

• Extended VGSS range (±12V) for battery applications.

• ESD protection diode (note 3).

• High performance trench technology for extremely low RDS(ON) .

• Low profile TSSOP-8 package.

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management