General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• 6 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V

• Extended VGSS range (±12V) for battery applications.

• ESD protection diode (note 3).

• High performance trench technology for extremely low RDS(ON)

• Low profile TSSOP-8 package

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management