General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• 9.4 A, 20 V

RDS(ON) = 14 mΩ @ VGS = 4.5 V

RDS(ON) = 18 mΩ @ VGS = 2.5 V

• Low gate charge (16 nC typical)

• ESD protection diode (note 3)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

• Qualified to AEC Q101

• RoHS Compliant