General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 10 V

• High performance trench technology for extremely low RDS(ON)

• Low gate charge (13 nC typical)

• High power and current handling capability

Applications

• DC/DC converter