General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “high side” synchronous rectifier operation, providing an extremely low RDS(ON) and fast switching in a small package.

Features

• 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5V RDS(ON) = 20 mΩ @ VGS = 10 V

• High performance trench technology for extremely low RDS(ON)

• Fast switching, low gate charge

• High power and current in a smaller footprint than SO-8

Applications

• DC/DC converter