General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

• 11.5 A, 30 V.

RDS(ON) = 9.5 mΩ @ VGS = 4.5 V

RDS(ON) = 8.5 mΩ @ VGS = 10 V

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability in a smaller footprint than SO8

Applications

• Synchronous rectifier

• DC/DC converter