General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

• 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V

RDS(ON) = 10.5 mΩ @ VGS = 4.5 V

• Low gate charge (27 nC typical)

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• 175°C maximum junction temperature rating