General Description

This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDP6644S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6644S/FDB6644S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6644/FDB6644 in parallel with a Schottky diode.

Features

• 28 A, 30 V. RDS(ON) = 10 mΩ @ VGS = 10 V

RDS(ON) = 12 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky body diode

• Low gate charge (27nC typical)

• High performance trench technology for extremely

low RDS(ON) and fast switching

• High power and current handling capability