General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

Features

· –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V

RDS(ON) = 70 mW @ VGS = –2.5 V

RDS(ON) = 100 mW @ VGS = –1.8 V

· Fast switching speed

· ESD protection diode

· High performance trench technology for extremely low RDS(ON)

· SuperSOTTM -3 provides low RDS(ON) and 30 higher power handling capability than SOT23 in the same footprint

Applications

· Battery management

· Load switch

· Battery protection