General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra portable applications. It features a MOSFET with low on-state

resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.

Features

MOSFET:

■ Max rDS(on)= 120mΩat VGS= –4.5V, ID= –3.0A

■ Max rDS(on)= 160mΩat VGS= –2.5V, ID= –2.5A

■ Max rDS(on)= 240mΩat VGS= –1.8V, ID= –1.0A

Schottky:

■ VF< 0.54V @ 1A

■ Low profile - 0.8 mm maximum - in the new pack age MicroFET 2x2 mm

■ RoHS Compliant