Features

MOSFET

• Max rDS(on) = 95 m at VGS = –4.5 V, ID = –3.1 A

• Max rDS(on) = 141 m at VGS = –2.5 V, ID = –2.5 A

• HBM ESD Protection Level > 2.5 kV (Note 1)

Schottky

• VF < 0.37 V @ 500 mA

• Low Profile − 0.8 mm Maximum − In the New Package MicroFET

2x2 mm

• These Devices are Pb−Free and are RoHS Compliant