General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –7 A, –20 V RDS(ON) = 22 mΩ @ VGS = –4.5 V RDS(ON) = 30 mΩ @ VGS = –2.5 V

• High performance trench technology for extremely low RDS(ON)

• Fast switching speed

• FLMP SuperSOT-6 package: Enhanced thermal performance in industry-standard package size

Applications

• Battery management

• Load Switch

• Battery protection