PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp

SOT223 PNP SILICON PLANAR HIGH CURRENT

Features • BVCEO > -300V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(sat)

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

文件：114.11 Kbytes Page：5 Pages

400V PNP MEDIUM POWER TRANSISTOR

文件：716.77 Kbytes Page：7 Pages

PNP, 400V, 0.5A, SOT223

400V PNP MEDIUM POWER TRANSISTOR IN SOT223

文件：782.97 Kbytes Page：7 Pages

400V PNP MEDIUM POWER TRANSISTOR

文件：716.77 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 400V 0.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

400V PNP MEDIUM POWER TRANSISTOR

文件：716.77 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 400V 0.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internal input and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, b

UHF power transistors

DESCRIPTION NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors have internal input and output matching by means of MOS capacitors. The encapsulations are a 2-lead rectangular SOT391A flange package and a SOT391B flangeless package, b

AMPLIFIER TRIODE ACORN TYPE

文件：149.4 Kbytes Page：3 Pages

Plug connector Screw connection, large conductor space

文件：80.67 Kbytes Page：1 Pages

Debugging and Programming Interfaces for Custom Designs

文件：582.11 Kbytes Page：19 Pages