PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps

SOT223 PNP SILICON PLANAR HIGH CURRENT

Features • BVCEO > -140V • IC = -4A High Continuous Collector Current • ICM = -10A Peak Pulse Current • Low Saturation Voltage VCE(sat)

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

Features • BVCEO > -140V • IC = -4A High Continuous Collector Current • ICM = -10A Peak Pulse Current • Low Saturation Voltage VCE(sat)

PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High Voltage • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF • Marking:ZT955

NPN Silicon Planar High Voltage Transistor

Features ● 4 Amps continuous current ● Very low saturation voltages ● Excellent gain characteristics specified up to 3 Amps

4 Amps continuous current (10 Amps peak current)

Features ■ 4 Amps continuous current (10 Amps peak current) ■ Very low saturation voltages. ■ Excellent gain characteristics specified up to 3 Amps. ■ Ptot = 3 watts.

丝印代码：ZT955；SOT-223 Plastic-Encapsulate Transistors

FEATURES High Voltage Low saturation voltages

140V PNP MEDIUM POWER TRANSISTOR

文件：615.15 Kbytes Page：7 Pages

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

文件：228.84 Kbytes Page：5 Pages

140V,4A,General Purpose PNP Bipolar Transistor

小信号双极型晶体管

晶体管

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

Features • BVCEO > -140V • IC = -4A High Continuous Collector Current • ICM = -10A Peak Pulse Current • Low Saturation Voltage VCE(sat)

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

文件：228.84 Kbytes Page：5 Pages

140V PNP MEDIUM POWER TRANSISTOR IN SOT223

文件：638.66 Kbytes Page：7 Pages

140V PNP MEDIUM POWER TRANSISTOR

文件：615.15 Kbytes Page：7 Pages

140V PNP MEDIUM POWER TRANSISTOR

文件：615.15 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 140V 4A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 140V 4A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Integrated Circuit Timing Circuit

Description: The NTE955 series timing circuit is a highly stable controller capable of producing accurate time de lays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In time delay mode of operation, the time is precisely controlled by one external res

Integrated Circuit CMOS Timing Circuit

Description: The NTE955 series timing circuit is a highly stable controller capable of producing accurate time de lays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In time delay mode of operation, the time is precisely controlled by one external res

Integrated Circuit Timing Circuit

Description: The NTE955 series timing circuit is a highly stable controller capable of producing accurate time de lays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In time delay mode of operation, the time is precisely controlled by one external res

Integrated Circuit Timing Circuit

Description: The NTE955 series timing circuit is a highly stable controller capable of producing accurate time de lays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In time delay mode of operation, the time is precisely controlled by one external res

Integrated Circuit Timing Circuit

Description: The NTE955 series timing circuit is a highly stable controller capable of producing accurate time de lays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In time delay mode of operation, the time is precisely controlled by one external res