NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A * 6 Amps continuous current, up to 20 Amps peak current * Very low saturation voltages * Excellent hFE characteristics specified up to 10 Amps

SOT223 NPN SILICON PLANAR HIGH CURRENT

Features • BVCEO > 60V • IC = 6A High Continuous Collector Current • ICM = 20A Peak Pulse Current • Low Saturation Voltage VCE(sat)

NPN Silicon Planar High Current Transistor

■ Features ● Collector Current Capability IC=6A ● Collector Emitter Voltage VCEO=100V ● Complementary to FZT953

100V NPN MEDIUM POWER TRANSISTOR

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PWM high-efficiency LED driver control IC.

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Transistor

NPN Transistors

NPN, 100V, 6A, SOT223

100V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 100V • IC = 6A High Continuous Collector Current • ICM = 10A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

100V NPN MEDIUM POWER TRANSISTOR IN SOT223

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NPN Transistors

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100V NPN MEDIUM POWER TRANSISTOR

文件：406.04 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 6A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100V NPN MEDIUM POWER TRANSISTOR

文件：406.04 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 100V 6A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MICROMINIATURE POLARIZED RELAY

FEATURES • Conforms to IEC60950/UL1950/EN60950 spacing and high breakdown voltage Clearance: 1.0 mm (between coil and contacts) Creepage: 1.6 mm (between coil and contacts) Basic Insulation: 150 V Working Voltage, Pollution Degree 2 • Monostable and bistable (latching) versions av

3M??Polyester Tape 853

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PC Mount, Shocksafe 5x20mm Fuses

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LF (70/455 kHz)

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SINGLE DIGIT LED DISPLAYS

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