PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits

SOT223 PNP SILICON PLANAR MEDIUM

Features • BVCEO > -200V • BVCBO > -200V • IC = -500m Continuous Current • hFE > 250 for High Gain @ -0.3A • Very Low VCE(sat) • Complementary NPN Type: FZT696B • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q10

SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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200V PNP MEDIUM POWER HIGH GAIN TRANSISTOR

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封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS PNP 200V 0.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 200V 0.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Optically Isolated Sigma-Delta Modulator

Description The ACPL-796J is a 1-bit, second-order sigma-delta (Σ-Δ) modulator converts an analog input signal into a high-speed data stream with galvanic isolation based on optical coupling technology. The ACPL-796J operates from a 5 V power supply with dynamic range of 80 dB with an appropriate

I2C-Compatible, Wide Bandwidth, Hex 2:1 Multiplexer

GENERAL DESCRIPTION The ADG796A is a monolithic CMOS device comprising six 2:1 multiplexer/demultiplexers controlled by a standard I2C serial interface. The CMOS process provides ultralow power dissipation, yet offers high switching speed and low on resistance. The on resistance profile is very

I2C-Compatible, Wide Bandwidth, Hex 2:1 Multiplexer

GENERAL DESCRIPTION The ADG796A is a monolithic CMOS device comprising six 2:1 multiplexer/demultiplexers controlled by a standard I2C serial interface. The CMOS process provides ultralow power dissipation, yet offers high switching speed and low on resistance. The on resistance profile is very

I2C-Compatible, Wide Bandwidth, Hex 2:1 Multiplexer

GENERAL DESCRIPTION The ADG796A is a monolithic CMOS device comprising six 2:1 multiplexer/demultiplexers controlled by a standard I2C serial interface. The CMOS process provides ultralow power dissipation, yet offers high switching speed and low on resistance. The on resistance profile is very

EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors