SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > -400V • IC = -500mA High Continuous Current • ICM = 1A Peak Pulse Current • Low Saturation Voltage VCE(SAT) 40 Specified up to 200mA for High Current Gain Hold Up • Complementary NPN Type: FZT658 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Low saturation voltage COMPLEMENTARY TYPE - – FZT658 PARTMARKING DETAIL -– FZT758

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > -400V • IC = -500mA High Continuous Current • ICM = 1A Peak Pulse Current • Low Saturation Voltage VCE(SAT) 40 Specified up to 200mA for High Current Gain Hold Up • Complementary NPN Type: FZT658 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

PNP, 400V, 0.5A, SOT223

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

Features • BVCEO > -400V • IC = -500mA High Continuous Current • ICM = 1A Peak Pulse Current • Low Saturation Voltage VCE(SAT) 40 Specified up to 200mA for High Current Gain Hold Up • Complementary NPN Type: FZT658 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

400V PNP HIGH VOLTAGE TRANSISTOR IN SOT223

文件：525.46 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 400V 0.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 400V 0.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

3 ohm, 4-/8-Channel Multiplexers in Chip Scale Package

GENERAL DESCRIPTION The ADG758 and ADG759 are low voltage, CMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG758 switches one of eight inputs (S1–S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1, and A2.

3 ohm, 4-/8-Channel Multiplexers in Chip Scale Package

GENERAL DESCRIPTION The ADG758 and ADG759 are low voltage, CMOS analog multiplexers comprising eight single channels and four differential channels, respectively. The ADG758 switches one of eight inputs (S1–S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1, and A2.

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION

HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50–1000 VOLTS DIFFUSED JUNCTION • Current Capacity Comparable to Chassis Mounted Rectifiers • Very High Surge Capacity • Insulated Case Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 2.5 grams (approximately) • Finish: All External S

DUAL PNP MEDIUM POWER TRANSISTORS

SM-8 DUAL PNP MEDIUM POWER TRANSISTORS

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt