NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching

SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching

SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Features • BVCEO > 80V • BVCBO > 100V • IC = 2A High Continuous Current • Useful hFE up to 6A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability

NPN, 80V, 2A, SOT223

SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching

NPN bipolar-transistors

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 80V 2A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN DARL 80V 2A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PHASE CONTROL THYRISTOR

PHASE CONTROL THYRISTOR Repetitive voltage up to 1600 V Mean on-state current 720 A Surge current 8.8 kA

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 6.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes)

SUPER FAST RECOVERY RECTIFIER VOLTAGE - 200 to 600 Volts CURRENT - 6.0 Amperes FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters

TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver

GENERAL DESCRIPTION Six n-channel, enhancement mode, logic level, field-effect power transistors and six schottky diodes configured as three half-bridges. This device has low on-state resistance and fast switching. The intended application is in computer disk and tape drives as a three phase brus

P-CHANNEL MOS FET 6-PIN 2 CIRCUITS

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to µPA602T • Automatic mounting