30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 30V • IC = 1A High Continuous Current • ICM = 4A Peak Pulse Current • Low Saturation Voltage • Complementary PNP Type: FZT589 • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for H

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Current Transistors

High Current Transistors NPN Silicon

High Current Transistors

High Current Transistors NPN Silicon

High Current Transistors

High Current Transistors NPN Silicon

High Current Transistors(NPN Silicon)

High Current Transistors NPN Silicon Features • Pb−Free Packages are Available*

Silicon P-Channel JFET Transistor General Purpose AF Amplifier

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Gate–Drain Voltage (Note 1), VGD . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage (Note 1), VGS . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . .