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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FXT657 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * 300 Volt VCEO * 0.5 Amps continuous current * Ptot= 1 Watt APPLICATIONS * Telephone dialler circuits * Video output drivers | ZETEX |   | |
FXT657 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | DIODES 美台半导体 | | |
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | ||
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | ||
1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER 文件：390.26 Kbytes Page：20 Pages | TI 德州仪器 | | ||
1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER 文件：390.26 Kbytes Page：20 Pages | TI 德州仪器 | | ||
POWER INTEGRATED CIRCUIT 文件：222.09 Kbytes Page：4 Pages | MICROSEMI 美高森美 | |
FXT657产品属性
- 类型
描述
- 型号
FXT657
- 功能描述
两极晶体管 - BJT -
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
FXT657芯片相关品牌
FXT657规格书下载地址
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FXT657数据表相关新闻
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2019-4-16
DdatasheetPDF页码索引
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