型号 功能描述 生产厂家 企业 LOGO 操作

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

Mitsubishi

三菱电机

High-Speed Switching Use

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

POWEREX

High-Speed Switching Use

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1

Mitsubishi

三菱电机

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

RENESAS

瑞萨

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP

Mitsubishi

三菱电机

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........10

POWEREX

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

RENESAS

瑞萨

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

RENESAS

瑞萨

MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

文件:85.1 Kbytes Page:5 Pages

RENESAS

瑞萨

MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE

文件:85.1 Kbytes Page:5 Pages

RENESAS

瑞萨

HIGH-SPEED SWITCHING USE

文件:110.02 Kbytes Page:7 Pages

RENESAS

瑞萨

Power MOSFETs

RENESAS

瑞萨

Power MOSFETs

RENESAS

瑞萨

Power MOSFETs

RENESAS

瑞萨

FX30KMJ产品属性

  • 类型

    描述

  • 型号

    FX30KMJ

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-10-18 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
瑞萨/三菱
24+
NA/
6388
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
MITSUBISHI/三菱
22+
TO-220
100000
代理渠道/只做原装/可含税
MITSUBISHI/三菱
25+
TO220F
4802
原装正品,假一罚十!
MIT
23+
TO-220F
5000
专做原装正品,假一罚百!
Renesas
17+
TO-220F
6200
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
RNNESAS
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MITSUBISHI/三菱
23+
TO-3P
45000
原厂授权一级代理,专业海外优势订货,价格优势、品种
原装正品
23+
TO-220
69380
##公司主营品牌长期供应100%原装现货可含税提供技术

FX30KMJ数据表相关新闻

  • FX10A-144S-SV新到货专营连接器,只做进口!

    GT8E-5S-HU 52957-1 284322-1 350766-4 1-647402-0 3-647003-4 66506-3 103653-3 1062-16-1222 2-967624-1 TN025-00200 1928403110 926887-1 16-04477 640452-5 640453-5 7183-7771-80 HD36-24-16SE-059 53254-0570 PPI0001486 368503-1 SKRAAQE010 1827571-2 08-65-0805 165

    2022-8-12
  • FX32K144HAT0MLHT深圳市芯为科技有限公司

    NXP

    2022-4-6
  • FX32K144HAT0MLLT

    深圳市亿建盛电子有限公司是一家专业化的,综合性的电子元器件独立分销商。支持小订单,稳定可靠,专业服务,为我们的经营理念。我们承诺只有原厂原装正品货,所有货品都来自正规渠道。

    2021-9-1
  • FX32K144HAT0MLHT原装现货 特价销售

    本公司销售原装正品 价格优惠 欢迎订购

    2021-8-5
  • FX2CA2-100S-1.27DSA(71)

    FX2CA2-100S-1.27DSA(71)

    2021-1-25
  • FX30B-5S-3.81DSA

    深圳科雨电子有限公司,联系人:卢小姐 手机:18975515225 原装正品 大量现货,有需要的可以联系我 QQ:97877805 微信:wei555222777

    2019-6-6