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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | MITSUBISHI 三菱电机 |   | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | MITSUBISHI 三菱电机 | | ||
High-Speed Switching Use Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) ......... | POWEREX | | ||
High-Speed Switching Use Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1 | MITSUBISHI 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) .............................................. 0.143Ω • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........1 | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........10 | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –150V • rDS (ON) (MAX) .............................................. 100mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP | MITSUBISHI 三菱电机 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –150 V • rDS(ON) (max) : 100 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE 文件：85.1 Kbytes Page：5 Pages | RENESAS 瑞萨 | | ||
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE 文件：85.1 Kbytes Page：5 Pages | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE 文件：110.02 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
FX30KMJ产品属性
- 类型
描述
- 型号
FX30KMJ
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CML |
DIP |
1200 |
正品原装--自家现货-实单可谈 |
||||
MIT |
25+ |
TO220 |
9800 |
全新原装现货,假一赔十 |
|||
MITSUBISHI/三菱 |
23+ |
TO-3P |
45000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MIT |
2447 |
TO-220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MITSUBISHI |
25+ |
MODULE |
3500 |
MITSUBISHI系列在售 |
|||
RENESAS/瑞萨 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
MITSUBISHI |
23+ |
MODULE |
2800 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
Sierra Wireless |
23+ |
TO-18 |
12800 |
原装正品代理商最优惠价格 现货或订货 |
|||
MITSUBISHI |
24+ |
TO-220F |
25000 |
只做原装正品现货 欢迎来电查询15919825718 |
FX30KMJ芯片相关品牌
FX30KMJ规格书下载地址
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FX30KMJ数据表相关新闻
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GT8E-5S-HU 52957-1 284322-1 350766-4 1-647402-0 3-647003-4 66506-3 103653-3 1062-16-1222 2-967624-1 TN025-00200 1928403110 926887-1 16-04477 640452-5 640453-5 7183-7771-80 HD36-24-16SE-059 53254-0570 PPI0001486 368503-1 SKRAAQE010 1827571-2 08-65-0805 165
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NXP
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深圳市亿建盛电子有限公司是一家专业化的，综合性的电子元器件独立分销商。支持小订单，稳定可靠，专业服务，为我们的经营理念。我们承诺只有原厂原装正品货，所有货品都来自正规渠道。
2021-9-1FX32K144HAT0MLHT原装现货 特价销售
本公司销售原装正品 价格优惠 欢迎订购
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2019-6-6
DdatasheetPDF页码索引
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