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FW2价格
参考价格：￥1.5600
型号：FW201-PM-TL 品牌：SANYO 备注：这里有FW2多少钱，2025年最近7天走势，今日出价，今日竞价，FW2批发/采购报价，FW2行情走势销售排行榜，FW2报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FW2 | EH Series Audio/Video/Data CONNECTORS 文件：875.32 Kbytes Page：4 Pages | SWITCH Switch Publishing Co.，Ltd. |  |   |
2.0P HOUSING 24P 6.2H MechanicalFeatures ■Matingforce:Max0.2kgfn(pins) ■Unmatingforce:locking:Min5.0kgf unlocking:1.0~3.6kgf | FOOSUNGFOOSUNG CO, LTD. 韩国厚成厚成科技(南通)有限公司 |  | | |
2.0P HOUSING 24P 6.2H MechanicalFeatures ■Matingforce:Max0.2kgfn(pins) ■Unmatingforce:locking:Min5.0kgf unlocking:1.0~3.6kgf | FOOSUNGFOOSUNG CO, LTD. 韩国厚成厚成科技(南通)有限公司 | | | |
2.0P HOUSING 24P 6.2H MechanicalFeatures ■Matingforce:Max0.2kgfn(pins) ■Unmatingforce:locking:Min5.0kgf unlocking:1.0~3.6kgf | FOOSUNGFOOSUNG CO, LTD. 韩国厚成厚成科技(南通)有限公司 | | | |
Ultrahigh-Speed Switching Applications Ultrahigh-SpeedSwitchingApplications Features •LowONresistance •Ultrahigh-speedswitching. •Compositetypewithtwo4V-driveN-channelMOSFETsfacilitatinghigh-densitymounting. •Matchedpaircapability. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
Ultrahigh-Speed Switching Applications Features •LowONresistance •Ultrahigh-speedswitching. •Compositetypewithtwo4V-driveN-channelMOSFETsfacilitatinghigh-densitymounting. •Matchedpaircapability. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
DC-DC Converter Applications DC-DCConverterApplications Features •LowONresistance. •2.5Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Ultrahigh-Speed Switching Applications Features •LowONresistance. •2.5Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Load Switching Applications LoadSwitchingApplications Features •LowONresistance. •2.5Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •Compositetype,facilitatinghigh-densitymounting. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •Compositetype,facilitatinghigh-densitymounting. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
General-Purpose Switching Device Applications General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •Compositetype,facilitatinghigh-densitymounting. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Load Switching Applications LoadSwitchingApplications Features •LowON-resistance. •2.5Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device General-PurposeSwitchingDeviceApplications Features •2.5Vdrive. •Compositetype,facilitatinghigh-densitymounting. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Load Switching Applications LoadSwitchingApplications Features •LowONresistance. •4Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Load Switching Applications LoadSwitchingApplications Features •LowON-resistance. •2.5Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
Load Switching Applications LoadSwitchingApplications Features •LowON-resistance. •4Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
DC/DC Converter Applications DC/DCConverterApplications Features •LowONresistance. •4Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
DC / DC Converter Applications Features •LowON-resistance. •4Vdrive. •Ultrahigh-speedswitching. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N CHANNEL MOS SILICON TRANSISTOR N-ChannelSiliconMOSFET Features •Motordrive. •4Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
PNP POWER DARLINGTON TRANSISTOR DESCRIPTION TheFW26025A1isasiliconEpitaxial-BasePNPpowertransistorinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase.Itisintededforgeneralpurposeamplifierandlowfrequencyswitchingapplications. •INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE APPLICATION | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
isc Silicon PNP Darlington Power Transistor DESCRIPTION •HighDCCurrentGain- :hFE=5000(Min)@IC=-2A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=-100V(Min) •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation. APPLICATIONS •Designedforlinearandswitchingindustrialequipme | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
N CHANNEL MOS SILICON TRANSISTOR N-ChannelSiliconMOSFET General-PurposeSwitchingDeviceApplications Features •LowON-resistance. •4Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET Features •LowON-resistance. •2.5Vdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
SOP8 N+N 100V 200MR 文件：755.736 Kbytes Page：5 Pages |  | | ||
封装/外壳：4-SMD，无引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CRYSTAL 20.0000MHZ 12PF SMD 晶体，振荡器，谐振器 晶体 | PAMDiodes Incorporated 龙鼎微龙鼎微电子（上海）有限公司 |  | | |
封装/外壳：4-SMD，无引线 包装：卷带（TR） 描述：CRYSTAL 20.0000MHZ 10PF SMD 晶体，振荡器，谐振器 晶体 | PAMDiodes Incorporated 龙鼎微龙鼎微电子（上海）有限公司 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Bobbintron Electrical Corporation 文件：1.7929 Mbytes Page：36 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | | |
Fusible Power Resistors 文件：598.77 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 |  | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
Fusible Power Resistors 文件：669.84 Kbytes Page：4 Pages | BournsBourns Electronic Solutions 伯恩斯 | | | |
PCI-to-PCI Bridge 文件：345.93 Kbytes Page：36 Pages | IntelIntel Corporation 英特尔 |  | | |
DC-DC Converter Applications 文件：45.1 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
21555AA/BA and 21555AB/BB Differences 文件：52.89 Kbytes Page：6 Pages | IntelIntel Corporation 英特尔 | | | |
21555AA/BA and 21555AB/BB Differences 文件：52.89 Kbytes Page：6 Pages | IntelIntel Corporation 英特尔 | | | |
21555AA/BA and 21555AB/BB Differences 文件：52.89 Kbytes Page：6 Pages | IntelIntel Corporation 英特尔 | | | |
21555AA/BA and 21555AB/BB Differences 文件：52.89 Kbytes Page：6 Pages | IntelIntel Corporation 英特尔 | | | |
21555AA/BA and 21555AB/BB Differences 文件：52.89 Kbytes Page：6 Pages | IntelIntel Corporation 英特尔 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device 文件：37.12 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：348.92 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET 文件：267.01 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
N-Channel Power MOSFET 文件：267.01 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device 文件：37.11 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：347.89 Kbytes Page：4 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
N-Channel Power MOSFET 文件：348.98 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
FW2产品属性
- 类型
描述
- 型号
FW2
- 制造商
SWITCH
- 制造商全称
Switchcraft, Inc.
- 功能描述
EH Series Audio/Video/Data CONNECTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
23+ |
SOP-8 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
20+ |
BGA |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
||||
SANYO |
23+ |
SOP8 |
7850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MINI |
2021+ |
3000 |
十年专营原装现货,假一赔十 |
||||
MINI |
24+ |
9000 |
原装现货假一赔十 |
||||
MINI |
24+ |
SMD |
3600 |
MINI专营品牌全新原装正品假一赔十 |
|||
原装 |
24+ |
BGA |
2195 |
原装正品!公司现货热卖! |
|||
SANYO/三洋 |
23+ |
SOP-8 |
69000 |
全新原装现货热卖/代理品牌/可申请样品和规格书 |
|||
INTEL |
19+ |
BGA |
12547 |
||||
DIODES |
24+ |
QFN |
471000 |
郑重承诺只做原装进口现货 |
FW2芯片相关品牌
FW2规格书下载地址
FW2参数引脚图相关
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FW2数据表相关新闻
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FVUS011-NA日本进口原装电磁阀
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