| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,1.2A,RDS(ON)=10.5W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,2.0A,RDS(ON)=5.0W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-126Fpackage. Lead-freeplating;RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
CET/華瑞 |
23+ |
NA/ |
5280 |
原装现货,当天可交货,原型号开票 |
|||
CET |
08PB |
50000 |
|||||
CET/華瑞 |
SOT-263 |
265209 |
假一罚十原包原标签常备现货! |
||||
CET |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
CET |
2020+ |
TO-263 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
23+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CET/華瑞 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
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2020-3-13
DdatasheetPDF页码索引
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