P-Channel Enhancement Mode Power MOSFET

文件：460.68 Kbytes Page：4 Pages

Plastic-Encapsulate MOSFETS

Description The FQ60P05Q uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a wide variety of applications.

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P05BY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-5A RDS(ON)

P-Channel Enhancement Mode Power MOSFET

文件：1.84438 Mbytes Page：5 Pages

P -Channel Enhancement Mode Field Effect Transistor

文件：669.71 Kbytes Page：4 Pages