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FTK1206

丝印代码:1206;P-Channel Power MOSFET

文件:590.77 Kbytes Page:5 Pages

FS

FTK1206

MOS FET:Low Voltage

FS

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit Phase Lock Loop (PLL) Stereo Decoder

Features: ● Requires No Inductors ● Low External Part Count ● Only Oscillator Frequency Adjustment Necessary ● Integral Stereo/Monaural Switch 75mA Lamp Driving Capability ● Wide Dynamic Range: Typically up to 1.3V(RMS) Composite Input Signal ● Wide Supply Voltage: 8V to 16V ● Excellent Cha

NTE

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all “freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control ci

STMICROELECTRONICS

意法半导体

High efficiency DC/DC converter

文件:78.42 Kbytes Page:16 Pages

PHILIPS

飞利浦

High efficiency DC/DC converter

文件:78.42 Kbytes Page:16 Pages

PHILIPS

飞利浦

FTK1206产品属性

  • 类型

    描述

  • PC:

    0.5

  • ID:

    -6

  • VDSS:

    -12

  • Vth(min):

    -0.5

  • RDS:

    45

  • VGS(RDS):

    -4.5

  • Package:

    DFN22

更新时间:2026-7-24 14:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FS
2025+
DFN22
5000
原装进口价格优 请找坤融电子!
FS
22+
DFN22
20000
只做原装
FIRSTSILICON
23+
DFN22
200924
原厂授权一级代理,专业海外优势订货,价格优势、品种

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