Low Frequency Transistor PNP Silicon

FEATURE ● High current capacity in compact package. IC = 0.8A. ● Epitaxial planar type. ● NPN complement: FTB1781K ● We declare that the material of product compliance with RoHS requirements.

TRANSISTOR:Genreal Purpuse

Low Frequency Transistor PNP Silicon

FEATURE ● High current capacity in compact package. IC = 0.8A. ● Epitaxial planar type. ● NPN complement: FTB1781K ● We declare that the material of product compliance with RoHS requirements.

Low Frequency Transistor PNP Silicon

FEATURE ● High current capacity in compact package. IC = 0.8A. ● Epitaxial planar type. ● NPN complement: FTB1781K ● We declare that the material of product compliance with RoHS requirements.

Low Frequency Transistor PNP Silicon

FEATURE ● High current capacity in compact package. IC = 0.8A. ● Epitaxial planar type. ● NPN complement: FTB1781K ● We declare that the material of product compliance with RoHS requirements.

Low Frequency Transistor PNP Silicon

FEATURE ● High current capacity in compact package. IC = 0.8A. ● Epitaxial planar type. ● NPN complement: FTB1781K ● We declare that the material of product compliance with RoHS requirements.

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