原边反馈（5级能效）

The FT838D/FT838R controller device is optimized for high-performance, low power switching mode power supply applications. The FT838D/FT838R facilitates CC/CV charger design by eliminating an opto-coupler and TL431. Its highly integrated functions such as Under Voltage Lockout (UVLO), Leading Edge B Constant-Current (CC) and Constant-Voltage (CV) with Primary Side Control\nProprietary technology enabling high efficiency and fast dynamic response\nNo audible noise over entire operating range\nApplications from 1W to more than 18W output\nDirect drive of BJT or MOS switch \nBuilt-in Cable Compens;

P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • -8 A, -20 V.

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process.

NPN (FM RADIO RF AMP, MIX, CONV, OSC, IF AMP)

FM RADIO RF AMP, MIX, CONV, OSC , IF AMP High Current Gain Banwidth Product ft= 250MHz(Typ)

ABRUPT VARACTOR DIODES

ABRUPT VARACTOR DIODES