位置：首页 > IC中文资料第11724页 > FT800DL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FT800DL | Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX |   | |
FT800DL | Phase Control SCR 800 Amperes Avg 200-1200 Volts | POWEREX | | |
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
Phase Control SCR 800 Amperes Avg 200-1200 Volts 文件：174.17 Kbytes Page：4 Pages | POWEREX | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | ||
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, | NEC 瑞萨 | | ||
NSC800TM High-Performance Low-Power CMOS Microprocessor 文件：785.95 Kbytes Page：76 Pages | NSC 国半 | |
FT800DL产品属性
- 类型
描述
- 型号
FT800DL
- 制造商
POWEREX
- 制造商全称
Powerex Power Semiconductors
- 功能描述
Phase Control SCR 800 Amperes Avg 200-1200 Volts
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
25+ |
MODULE |
17 |
主打螺丝模块系列 |
|||
MITSUBISHI/三菱 |
23+ |
MODULE |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MITSUBISHI |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
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FT800DL规格书下载地址
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2020-12-8
DdatasheetPDF页码索引
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