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FT4442

Low voltage and low power operations:

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N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4442 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages from 4.5V to 25V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4442 is Pb-free (meets ROHS & Sony 259 sp

AOSMD

万国半导体

ARINC 429 Multi-channel Buffer Receiver (RTA) (N Channel, Silicon Gate)

文件:169.57 Kbytes Page:21 Pages

ATMEL

爱特梅尔

ICs for Chip Cards / Intelligent 256/64/128-Byte EEPROM

文件:178.55 Kbytes Page:14 Pages

SIEMENS

西门子

ICs for Chip Cards / Intelligent 256/64/128-Byte EEPROM

文件:178.55 Kbytes Page:14 Pages

SIEMENS

西门子

更新时间:2026-5-25 9:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SLGO
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种

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