位置:首页 > IC中文资料第6298页 > FSYE913A0R4
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
FSYE913A0R4 | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | ||
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | |||
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil |
FSYE913A0R4产品属性
- 类型
描述
- 型号
FSYE913A0R4
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
FSYE913A0R4芯片相关品牌
FSYE913A0R4规格书下载地址
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FSYE913A0R4数据表相关新闻
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DdatasheetPDF页码索引
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